It was shown that the electronic states of extended defects in semiconductors could be classified, as being band-like or localized, by using deep-level transient spectroscopy when electron equilibration at the defect was taken into account. Computer simulations of deep-level transient spectroscopy were compared with data on 60 dislocations and NiSi2 platelets in Si. Narrow point-defect clouds were found in the former case, and a 2-dimensional metal ring was found in the latter case.

W.Schröter, J.Kronewitz, U.Gnauert, F.Riedel, M.Seibt: Physical Review B, 1995, 52[19], 13726-9