A general equation for the intensity which was diffracted by a matrix phase that contained inter-growths was applied to materials of the form, Bi2Sr2Cax-1CuxO, where x was 2 or 3. The latter was characterized by stacking defects (wrong number, x, of Cu-O planes in a half-cell). A least-squares program that was based upon this equation yielded the nature, concentration, and short-range order of the defect inter-growths. The program used peak shifts which were caused by the presence of defects.

O.Malis, M.Manciu, R.Manaila, A.Devenyi: Physica Status Solidi A, 1995, 147[2], 325-33