Transient enhanced B diffusion was observed during the annealing of amorphized wafers. This anomalous diffusion originated from interactions between end-of-range defects and dopants. Dopant trapping also occurred at dislocation loops. During annealing, these defects grew in size and reduced their density via the emission and capture of Si interstitial atoms. This behavior could be explained in terms of Ostwald ripening. The B diffusivity enhancement that was experimentally observed arose from a large supersaturation of Si interstitials in the defect-rich region and from a strong coupling between B atoms and Si interstitials. Both phenomena were transient.

C.Bonafos, A.Martinez, M.M.Faye, C.Bergaud, D.Mathiot, A.Claverie: Nuclear Instruments and Methods in Physics Research B, 1995, 106[1-4], 222-6