A photoluminescence study was made of the effects of a defect-enhanced impurity-free quantum-well barrier compositional intermixing that was caused by SiO2 cap annealing (750C) of a 1.5μ multiple quantum-well laser structure. A band-gap blue shift of as much as 112nm (about 0.066eV) was detected in the structure, and the degree of the shift could be controlled by varying the annealing time. The amount of the shift did not depend upon the thickness of the SiO2 cap.

N.Cao, B.B.Elenkrig, J.G.Simmons, D.A.Thompson, N.Puetz: Applied Physics Letters, 1997, 70[25], 3419-21