In-diffusion profiles of As were simulated on the basis of an integrated diffusion model that took account of the vacancy mechanism, the kick-out mechanism and the Frank-Turnbull mechanism. The simulations were performed using 4 parameters; each of which had a clear physical meaning and a physically reasonable value, with no additional  ad hoc  hypothesis. These parameters corresponded to the diffusion of dopant species and of the point defects that contributed to dopant diffusion.

Simulation of Boron, Phosphorus and Arsenic Diffusion in Silicon-Based on an Integrated Diffusion Model, and the Anomalous Phosphorus Diffusion Mechanism. M.Uematsu: Journal of Applied Physics, 1997, 82[5], 2228-46