Shallow buried dislocation networks could be used to organize the formation of epitaxial semiconductor quantum dots, via the periodic strain field induced at the growth front. Such dislocation networks were fabricated by epitaxially bonding two GaAs crystals, twisted and tilted with respect to each other, and studying them using transmission electron microscopy. The dislocation networks differed greatly from a mere superposition of a square screw dislocation network and a 1-dimensional mixed dislocation network accommodating twist and tilt, respectively. A detailed quantitative analysis of these dislocation networks was presented and it was explained how their properties were related to the crystal misorientations. Dislocation interaction generated a surface pattern of dilatational and compressive strain which favored the ordered growth of (Ga)InAs nanostructures.
Buried Dislocation Networks for the Controlled Growth of III–V Semiconductor Nanostructures. F.Glas, J.Coelho, G.Patriarche, G.Saint-Girons: Journal of Crystal Growth, 2005, 275[1-2], e1647-53