Serial sectioning and radiotracer techniques were used to study the diffusion of 115mCd in single crystals of Hg0.8Cd0.2Te in the absence or presence of an electric field. It was found that the tracer diffusion data at 200 to 400C could be described by:

D (cm2/s) = 8.8 x 10-9 exp[-0.52(eV)/kT]

In an electric field of 0.6V/cm, at 120 to 140C, the diffusivity on the cathode or anode side was 6.0 x 10-13cm2/s:

Effect of External Electrical Field on the Diffusion of Impurities in CdHgTe. F.A.Zaitov, G.M.Shalyapina, L.M.Shalyapina, O.V.Muknina: Fizika Tverdogo Tela, 1974, 16[4], 1207-8