Defects and Diffusion in Semiconductors

Volumes 183-185

doi: 10.4028/www.scientific.net/DDF.183-185

Defects and Diffusion in Semiconductors

Description:

The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.

Keywords:
The volume reflects the increasing interest in ceramic-type semiconductors such as GaN and in the solution of some of their characteristic problems; such as threading dislocations. Defect characterization in SiC is also the subject of one of the extensive review papers in this issue. Other reviews discuss aspects of defect and diffusion behaviour in traditional semiconductors (Si, III-V). In addition to the 5 review papers, a further 15 papers introduce new research results on a wide range of traditional semiconductor types (GaAs, Ge, HgCdTe,InAlAs, InAs, InAsP, InGaAs, InP, InSb, Si, ZnSe). These reviews, research results and abstracts together provide an invaluable and up-to-date insight into the current understanding of, and future prospects for, the field of semiconductor theory and applications.

Info:

ISBN-13:
978-3-908450-54-2
Editors:
D.J. Fisher
Pages:
560
Year:
2000
Edition:
softcover

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