Radiation-Induced Defect Formation in Ternary Ge-As-S Vitreous Semiconductors
A mechanism of g-induced (Co60 g-quanta of 1.25 MeV mean energy) changes in optical properties of ternary As-Ge-S chalcogenide vitreous semiconductors is analysed. It is connected with chemical bond re-switching accompanied by coordination topological defect formation. The origin of these defects for As-Ge-S system is discussed using data of positron annihilation lifetime spectroscopy, IR Fourier reflection measurements and mathematical statistics.
David J. Fisher
R.Y. Golovchak and O. I. Shpotyuk, "Radiation-Induced Defect Formation in Ternary Ge-As-S Vitreous Semiconductors ", Defect and Diffusion Forum, Vols. 230-232, pp. 67-80, 2004