Radiation-Induced Defect Formation in Ternary Ge-As-S Vitreous Semiconductors

Abstract:

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A mechanism of g-induced (Co60 g-quanta of 1.25 MeV mean energy) changes in optical properties of ternary As-Ge-S chalcogenide vitreous semiconductors is analysed. It is connected with chemical bond re-switching accompanied by coordination topological defect formation. The origin of these defects for As-Ge-S system is discussed using data of positron annihilation lifetime spectroscopy, IR Fourier reflection measurements and mathematical statistics.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 230-232)

Edited by:

David J. Fisher

Pages:

67-80

DOI:

10.4028/www.scientific.net/DDF.230-232.67

Citation:

R.Y. Golovchak and O. I. Shpotyuk, "Radiation-Induced Defect Formation in Ternary Ge-As-S Vitreous Semiconductors ", Defect and Diffusion Forum, Vols. 230-232, pp. 67-80, 2004

Online since:

November 2004

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$35.00

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