Current-Voltage Measurements on Indium Phosphide Schottky Diodes
In this paper, current-voltage (i-Vg) results from different kinds of n-type InP Schottky diodes are reported. The diodes were fabricated on an unintentionally doped n-type (100) indium phosphide substrate, and the i-Vg characteristics were measured in the temperature range 100 300 K. For the ideality factor, n always exhibited a small (1) but continuous increase with the voltage. At higher forward voltage, slightly higher values of n were due to series resistance effect; in other words, the interface state density always remained small. However, it was possible to obtain some information in the case of discrete interface traps. It was shown that i-Vg measurements can be used as a fast method to determine the densities of the interface states when they equilibrate with the semiconductor.
Andreas Öchsner, Graeme E. Murch and Ali Shokuhfar
C. A.C. Sequeira and D. M.F. Santos, "Current-Voltage Measurements on Indium Phosphide Schottky Diodes", Defect and Diffusion Forum, Vols. 283-286, pp. 577-582, 2009