Internal Interface Strains Effects on UO2/U3O7 Oxidation Behaviour

Abstract:

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The growth of a U3O7 oxide layer during the anionic oxidation of UO2 pellets induced very important mechanical stresses due to the crystallographic lattice parameters differences between UO2 and its oxide. These stresses, combined with the chemical processes of oxidation, can lead to the cracking of the system, called chemical fragmentation. We study the crystallographic orientation of the oxide lattice growing at the surface of UO2, pointing to the fact that epitaxy relations at interface govern the coexistence of UO2 and U3O7. In this work, several results are given: - Determination of the epitaxy relations between the substrate and its oxide thanks to the Bollmann’s method; epitaxy strains are deduced. - Study of the coexistence of different domains in the U3O7 (crystallographic compatibility conditions at the interface between two phases: Hadamard conditions). - FEM simulations of a multi-domain U3O7 connected to a UO2 substrate explain the existence of a critical thickness of U3O7 layer.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 297-301)

Edited by:

Andreas Öchsner, Graeme E. Murch, Ali Shokuhfar and João M.P.Q. Delgado

Pages:

519-524

DOI:

10.4028/www.scientific.net/DDF.297-301.519

Citation:

N. Creton et al., "Internal Interface Strains Effects on UO2/U3O7 Oxidation Behaviour", Defect and Diffusion Forum, Vols. 297-301, pp. 519-524, 2010

Online since:

April 2010

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$35.00

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