Macroporous Silicon Electrochemical Etching for Gas Diffusion Layers Applications: Effect of Processing Temperature
MEMS technology requires low cost techniques to permit large scale fabrication for production. Porous silicon (PS) can be used in different manner to replace standard expensive etching techniques like DRIE (Deep Reactive Ion Etching). To perform same process quality as the latter, one need to understand how different parameters can influence porous silicon properties. We investigate here local formation of macroporous silicon on 2D and 3D silicon substrates. The blank substrate is a low doped (26–33 Ω cm) n type 6 inches silicon wafer. Then, an in situ phosphorus-doped polycrystalline silicon (N+ Poly-Si) is deposited on a thermal oxide layer to delimit the regions to be etched. Porous silicon is obtained afterwards using electrochemical anodization in a hydrofluoric acid (HF) solution. The effect of the temperature process on Si-HF electrochemical system voltamperometric curves, macropores morphology and electrochemical etch rates is more specifically studied. Moreover, permeation of porous substrates to hydrogen is studied after various anodization post-treatments such as KOH and HF wet etching or after a thin gold layer deposition used as current collector in micro fuel cells.
Andreas Öchsner, Graeme E. Murch, Ali Shokuhfar and João M.P.Q. Delgado
S. Kouassi et al., "Macroporous Silicon Electrochemical Etching for Gas Diffusion Layers Applications: Effect of Processing Temperature", Defect and Diffusion Forum, Vols. 297-301, pp. 887-892, 2010