Electrical Resistivity Improvement by Precipitation and Strain in Al-Cu Thin Films

Abstract:

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This work deals with Al-Cu thin films, deposited onto glass substrates by RF (13.56MHz) magnetron sputtering, and annealed at 773K. The film thickness was approximately the same 3-4µm. They are characterized with respect to microstructure, grain size, microstrain, dislocation density and resistivity versus copper content. Al (Cu) deposits containing 1.8, 7.21, 86.17 and 92.5at%Cu have been investigated. The use of X-ray diffraction analysis and transmission electron microscopy lead to the characterization of different structural features of films deposited at room temperature (< 400K) and after annealing (773K). The resistivity of the films was measured using the four-point probe method. The microstrain profile obtained from XRD thanks to the Williamson-Hall method shows an increase with increasing copper content.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 305-306)

Edited by:

David J. Fisher

Pages:

33-37

DOI:

10.4028/www.scientific.net/DDF.305-306.33

Citation:

S. Lallouche and M.Y. Debili, "Electrical Resistivity Improvement by Precipitation and Strain in Al-Cu Thin Films", Defect and Diffusion Forum, Vols. 305-306, pp. 33-37, 2010

Online since:

October 2010

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$35.00

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