Structural and Concentration Heterogeneities during Formation of Silicide Phases in the Thin Film System Ti(5nm)/Ni(24nm)/Si(001)


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By the methods of Auger-spectroscopy and mass-spectrometry of secondary ions, small-angle electron diffraction, X-ray and resistometry analyses the solid-state reactions in the Ti(5 nm)/ Ni(24 nm)/Si(001) thin film system at annealing in running nitrogen in the temperature interval of 723 – 1273 К are investigated. Regularities of phase transformations, consistency of solid-state reactions, layer-by-layer redistribution of components during annealing, features of surface morphology during formation of inclusions of silicide phases are established.



Edited by:

D.J. Fisher




S.I. Sidorenko et al., "Structural and Concentration Heterogeneities during Formation of Silicide Phases in the Thin Film System Ti(5nm)/Ni(24nm)/Si(001)", Defect and Diffusion Forum, Vol. 344, pp. 79-84, 2013

Online since:

October 2013




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