Characterisation of Defects in ZnO Implanted by Hydrogen
In the present work, defects created by implantation of hydrothermally grown ZnO single crystals of high quality with H+ ions were investigated by positron annihilation lifetime (LT) spectroscopy combined with measurements of optical transmittance (OT) and photoluminescence (PL). First, zinc vacancies attached with one hydrogen impurity (VZn – 1H) atom were identified in the virgin ZnO single crystal. The ZnO single crystals were then bombarded by H+ ions with the energy of 2.5 MeV to the fluence of 1016 cm-2. It was found that VZn – VO divacancies were introduced into ZnO by H+-implantation. Effects of H+-implantation on the optical activity of defects in ZnO lattice are characterised in the light of the present OT and PL data.
Prof. Andreas Öchsner, Prof. Graeme E. Murch, Ali Shokuhfar and Prof. João M.P.Q. Delgado
I. Procházka et al., "Characterisation of Defects in ZnO Implanted by Hydrogen", Defect and Diffusion Forum, Vol. 365, pp. 49-54, 2015