Characterisation of Defects in ZnO Implanted by Hydrogen

Procházka, Ivan; Čížek, Jakub; Valenta, Jan; Havránek, Vladimír; Hruška, Petr; Novotný, Michal; Lančok, Ján

doi:10.4028/www.scientific.net/DDF.365.49

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HomeDefect and Diffusion ForumDiffusion in Solids and Liquids XCharacterisation of Defects in ZnO Implanted by...

Characterisation of Defects in ZnO Implanted by Hydrogen

Abstract:

In the present work, defects created by implantation of hydrothermally grown ZnO single crystals of high quality with H⁺ ions were investigated by positron annihilation lifetime (LT) spectroscopy combined with measurements of optical transmittance (OT) and photoluminescence (PL). First, zinc vacancies attached with one hydrogen impurity (V_Zn – 1H) atom were identified in the virgin ZnO single crystal. The ZnO single crystals were then bombarded by H⁺ ions with the energy of 2.5 MeV to the fluence of 10¹⁶ cm^-2. It was found that V_Zn – V_O divacancies were introduced into ZnO by H⁺-implantation. Effects of H⁺-implantation on the optical activity of defects in ZnO lattice are characterised in the light of the present OT and PL data.

Info:

Periodical:

Defect and Diffusion Forum (Volume 365)

Main Theme:

Diffusion in Solids and Liquids X

Edited by:

Prof. Andreas Öchsner, Prof. Graeme E. Murch, Ali Shokuhfar and Prof. João M.P.Q. Delgado

Pages:

49-54

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.365.49

Citation:

I. Procházka et al., "Characterisation of Defects in ZnO Implanted by Hydrogen", Defect and Diffusion Forum, Vol. 365, pp. 49-54, 2015

Online since:

July 2015

Authors:

Ivan Procházka *, Jakub Čížek, Jan Valenta, Vladimír Havránek, Petr Hruška, Michal Novotný, Ján Lančok

Keywords:

Divacancies, Hydrogen Implantation, Positron Annihilation Spectroscopy, Zinc Oxide

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Paper TitlePages

Positron Lifetime and Doppler Broadening Study of Defects Created by Swift Ion Irradiation in Sapphire

Authors: L. Liszkay, Paulo M. Gordo, K. Havancsák, V.A. Skuratov, Adriano P. de Lima, Z. Kajcsos

138

Electron Irradiation Induced Vacancy Defects Detected by Positron Annihilation in 6H-SiC

Authors: Marie France Barthe, L. Henry, S. Arpiainen, G. Blondiaux

Abstract: This paper presents positron lifetime results which give information on the nature of vacancy defects induced by electron irradiation in bulk nitrogen doped (nD-nA= 2.3x1017 cm-3) Cree 6H-SiC. The electron irradiations have been performed at different energies and with different fluences from 5􀂗1017 e-cm-2 to 3􀂗1018 e-cm-2. Positron lifetime have been measured with a 22NaCl source as a function of temperature between 15 and 300 K. The lifetime spectra were analyzed as sums of two exponential lifetime components 􀁗i weighted by the intensities Ii, convoluted with the resolution function. From the temperature dependence of the lifetime spectra we can infer that several vacancy defects exist in the electron irradiated n-type 6H-SiC. The nature of detected vacancy defects depends on the electron energy.

473

Defects in Electron Irradiation Te-Doped GaSb Studied by Positron Lifetime Spectroscopy

Authors: H. Li, J.Y. Ke, J.B. Pang, Bo Wang, Z. Wang

Abstract: Defects induced by electron irradiation in Te-doped liquid-encapsulated Czochralski–grown GaSb were studied by the positron lifetime spectroscopy. The lifetime measurements under room temperature indicated there were VGa-related defects with a characteristic lifetime of 298 ps in the heavily Te-doped as-grown GaSb samples. The average lifetime increased with the increase of irradiation dose in lightly Te-doped GaSb,but the behavior was opposite in the heavily Te-doped samples. It should be due to the shift of Fermi level in heavily Te-doped GaSb and the occurrence of gallium vacancies in different charge states. In the temperature dependence measurements carried out on heavily Te-doped samples, we observed positron shallow trap, and this shallow trap should be attributed to positrons forming hyrogenlike Rydberg states with GaSb antisite defects.

140

Positron Lifetime at Deep Donors of Radiation Origin in Proton - Irradiated FZ-Silicon Single Crystals

Authors: Nikolai Yu. Arutynov, Mohamed Elsayed, Reinhard Krause-Rehberg, Valentin V. Emtsev, Gagik A. Oganesyan, Vitalii V. Kozlovski

Abstract: The recovery of shallow donor states of the atoms of phosphorus in n-FZ-Si:P material irradiated at the room temperature with 15 MeV protons was studied in the course of isochronal annealing. This process was investigated by the positron annihilation lifetime (PAL) spectroscopy and by low-temperature electrical measurements. The positron traps of a vacancy type manifesting themselves as deep donors have been revealed. These defects begin to anneal at ~ 593 K– 613 K; roughly estimated activation energy of the process is Ea ≈ 0.59 eV under the first order of reaction. The results suggest the involvement, at least, of one vacancy and the impurity atom of phosphorus in the microstructure of the deep donor.

224

Hydrogen-Induced Defects of Subsurface Layer in ZnO Single Crystal Probed by a Slow Positron Beam

Authors: X.D. Xue, T. Wang, J. Jiang, P.H. Li, Y.F. Liu, Yi Chu Wu

Abstract: Hydrogen-induced defects of ZnO single crystals electrochemically charged with hydrogen have been investigated by positron beam-based Doppler broadening spectroscopy, X-ray diffraction (XRD) and optical microscopy (OM). XRD and OM results indicated that a deformation layer was formed due to hydrogen-induced structural change at the subsurface of ZnO single crystal. Slow positron beam measurements showed that this deformation layer contained many defects, such as dislocations and Zn vacancies, which led to increase of S parameter.

232