[1]
C.Y. Lou, G.A. Somorjai, Studies of the vaporization mechanism of gallium arsenide single crystals, J. of Chem. Phys. 55 (1971) 4554-4565.
DOI: https://doi.org/10.1063/1.1676789
[2]
B. Goldshtein, D.J. Stozak, V.S. Ban, Langmuir evaporation from the (100), (111A) and (111B) faces of GaAs, Surf. Sci. 57 (1976) 733-740.
DOI: https://doi.org/10.1016/0039-6028(76)90358-7
[3]
S. Kanjanachuchai, C. Euaruksakul, Self-Running Ga Droplets on GaAs (111)A and (111)B Surfaces, ACS Appl. Mater. Interfaces 5 (2013) 7709-7713.
DOI: https://doi.org/10.1021/am402455u
[4]
Ju. Huhryanski, L. Veremjanina, I. Kombarova, I. Nikishina, О. Sysoev, Kinetics of Langmuir evaporation of indium phosphide and arsenide components, J. Phys. Chem. 71 (1997) 870-874.
[5]
S. Kanjanachuchai, P. Photongkam, Dislocation-guided self-running droplets, Cryst. Growth Des. 15 (2015) 14-19.
DOI: https://doi.org/10.1021/cg5013704
[6]
J. Jian-yun Shen, C. Chatillon, Thermodynamic calculations of congruent vaporization in III–V systems; Applications to the In-As, Ga-As and Ga-In-As systems, J. Cryst. Growth 106 (1990) 543-552.
DOI: https://doi.org/10.1016/0022-0248(90)90028-j
[7]
M. Panish, J. Arthur, Phase equilibria and vapor pressures of the system In+P, J. Chemical Thermodynamics 2 (1970) 299-318.
DOI: https://doi.org/10.1016/0021-9614(70)90001-7
[8]
А.N. Nesmeyanov, The vapor pressure of the chemical elements, Moscow, 1961, pp.204-206 (in rus.).
[9]
C. Pupp, J. Murray, R. Pottie, Vapour pressures of arsenic over InAs(c) and GaAs(c). The enthalpies of formation of InAs(c) and GaAs(c), J. Chem. Thermodynamics 6 (1974) 123-134.
DOI: https://doi.org/10.1016/0021-9614(74)90255-9
[10]
A. Zverev, C. Zinchenko, N. Shwartz, Z. Yanovitskaja, A Monte Carlo simulation of the processes of nanostructures growth: The time-scale event-scheduling algorithm, Nanotech. in Russia 4 (2009) 215-224.
DOI: https://doi.org/10.1134/s1995078009030094
[11]
A.A. Spirina, A.G. Nastovjak, S.V. Usenkov, N.L. Shwartz, Lattice Monte Carlo model of Langmuir evaporation of AIIIBV semiconductors: submitted to Journal Computational Technologies (in russian) (2018).
[12]
M. Vasilenko, I. Neizvestny, N. Shwartz, Formation of GaAs nanostructures by droplet epitaxy — Monte Carlo simulation, Comput. Mat. Sci. 102 (2015) 286-292.
DOI: https://doi.org/10.1016/j.commatsci.2015.02.032
[13]
R.N. Hall, Solubility of III–V compound Semiconductors in column III liquids, J. Electrochem. Soc. 110 (1963) 385-388.
DOI: https://doi.org/10.1149/1.2425770
[14]
A.A. Spirina, A.G. Nastovjak, N.L. Shwartz, Influence of GaAs substrates properties on the congruent evaporation temperature, J. Phys.: Conf. Ser. 993 (2018) 012011.
DOI: https://doi.org/10.1088/1742-6596/993/1/012011
[15]
H.C. Gatos, M.C. Lavine, Characteristics of the {111} Surfaces of the III-V Intermetallic Compounds, J. Electrochem. Society, 107 (1960) 427-433.
DOI: https://doi.org/10.1149/1.2427712