Abstract: Elemental semiconductors play an important role in high-technology equipment used in industry and everyday life. The first transistors were made in the 1950ies of germanium. Later silicon took over because its electronic band-gap is larger. Nowadays, germanium is the base material mainly for γ-radiation detectors. Silicon is the most important semiconductor for the fabrication of solid-state electronic devices (memory chips, processors chips, ...) in computers, cellphones, smartphones. Silicon is also important for photovoltaic devices of energy production.Diffusion is a key process in the fabrication of semiconductor devices. This chapter deals with diffusion and point defects in silicon and germanium. It aims at making the reader familiar with the present understanding rather than painstakingly presenting all diffusion data available a good deal of which may be found in a data collection by Stolwijk and Bracht , in the author’s textbook , and in recent review papers by Bracht [3, 4]. We mainly review self-diffusion, diffusion of doping elements, oxygen diffusion, and diffusion modes of hybrid foreign elements in elemental semiconductors.Self-diffusion in elemental semiconductors is a very slow process compared to metals. One of the reasons is that the equilibrium concentrations of vacancies and self-interstitials are low. In contrast to metals, point defects in semiconductors exist in neutral and in charged states. The concentrations of charged point defects are therefore affected by doping [2 - 4].
Abstract: This article reviews the studies of diffusion and defect phenomena induced by high-concentration zinc diffusion in the single-crystal III-V compound semiconductors GaAs, GaP, GaSb and InP by methods of transmission electron microscopy and their consequences for numerical modelling of Zn (and Cd) diffusion concentration profiles. Zinc diffusion from the vapour phase into single-crystal wafers has been chosen as a model case for interstitial-substitutional dopant diffusion in these studies. The characteristics of the formation of diffusion-induced extended defects and of the temporal evolution of the defect microstructure correlate with the experimentally determined Zn profiles whose shapes depend on the chosen diffusion conditions. General phenomena observed for all semiconductors are the formation of dislocation loops, precipitates, voids, and dislocations and of Zn-rich precipitates in the diffusion regions. The formation of extended defects near the diffusion front can be explained as result of point defect supersaturations generated by interstitial-substitutional zinc exchange via the kick-out mechanism. The defects may act as sinks for dopants and as sources and sinks for point defects during the continuing diffusion process, thereby providing a path to establishing defect-mediated local point defect equilibria. The investigations established a consistent picture of the formation and temporal evolution of defects and the mechanisms of zinc diffusion in these semiconductors for diffusion conditions leading to high-concentration Zn concentrations. Based on these results, numerical modelling of anomalously shaped dopant concentration profiles leads to satisfactory quantitative results and yields information on type and charge states of the point defect species involved, also for near-surface Zn concentration profiles and the absence of extended defects.
Abstract: High entropy alloys (HEAs) are considered as a novel class of materials with a large number of components (five and more) available in equiatomic or nearly equatomic proportions. One of the characteristic properties of HEAs was believed to be so-called 'sluggish' diffusion that should be crucial for intended high-temperature technological applications. The faith on this myth instead of rigorous experimental analysis played such a dominant role that the first set of data on interdi usion, in fact based on an improper analysis, were cited in hundreds of articles to state the presence of sluggishness of di usion rates in high entropy alloys.
Abstract: General trends in self- and impurity diffusion data are analyzed in high entropy alloys. Our analysis is based on the similarity of inter-atomic potentials in metals, which is in fact equivalent to a three-parameter description of the system (the mass, m, the lattice spacing, a, and the melting point, Tm, are only used). This leads to the so-called law of corresponding states in metals, manifested in many empirical rules (e.g. compensation laws or the proportionality between the self-diffusion activation energy and the melting point) if one uses dimensionless/reduced variables (like the homologous temperature: T*=T/Tm). It was shown in our previous papers, using the concept of a hypothetical crystal composed of simple atomic species whose properties are an average of the components, that the tracer diffusion of any species (let it be either one of the constituent atoms or a foreign atom) can be considered as impurity diffusion in the pure many-component matrix. Using this concept, we illustrate that the diffusion coefficients, Di, follow the same rule which obtained for impurity diffusion in pure metals: lnDi=A(T*)(Tmi/Tm-1)+r, with the same fitting parameters A(T*) and r. According to this, the diffusion of the constituent elements in high entropy alloys indeed shows some sluggish character, which can be attributed to a more or less temperature independent factor.
Abstract: Nanostructures used to build current technology devices are generally based on the stack of several thin films (from few nanometer-thick to micrometer-thick layers) having different physical properties (conductors, semiconductors, dielectrics, etc.). In order to build such devices, thin film fabrication processes compatible with the entire device fabrication need to be developed (each subsequent process step should not deteriorate the previous construction). Solid-state reactive diffusion allows thin film exhibiting good interfacial properties (mechanical, electrical…) to be produced. In this case, the film of interest is grown from the reaction of an initial layer with the substrate on which it has been deposited, during controlled thermal annealing. In the case of the reaction of a nano-layer (thickness < 100 nm) with a semi-infinite substrate, nanoscale effects can be observed: i) the phases appear sequentially, ii) not all the thermodynamic stable phases appear in the sequence (some phases are missing), and iii) some phases are transient (they disappear as fast as they appear). The understanding of the driving forces controlling such nanoscale effects is highly desired in order to control the phase formation sequence, and to stabilize the phase of interest (for the targeted application) among all the phases appearing in the sequence.This chapter presents recent investigations concerning the influence of atomic transport on the nanoscale phenomena observed during nano-film reactive diffusion. The results suggest that nano-film solid-state reaction could be controlled by modifying atomic transport kinetics, allowing current processes based on thin-film reactive diffusion to be improved.