Effects of Acetylene on Deposition Rate of Stainless Steels Using Thermal Chemical Vapor Deposition


Article Preview

A hot filament thermal chemical vapor deposition (CVD) reactor was used to deposit solid thin films on stainless steel 316 (SS 316) and stainless steel 201 (SS 201) substrates at different flow rates of acetylene (C2H2) gas. The variation of thin film deposition rate with the variation of gas flow rate has been investigated experimentally. During experiments are conducted under gas flow rate (1-5) lit/min gas flow rate, duration of deposition (10-60 min), pressure (0.2-1 bar), average surface roughness (0.3-1.05) µm and temperature 800 °C considered. Experimental results show that deposition rate on SS 316 and SS 201 increases with the increase in gas flow rate. The deposition rate also shows increasing trend with pressure and duration of deposition. Under the above mentioned experimental conditions deposition is found to be maximum of SS-316 compared to SS-201. In relation to roughness the maximum deposition is found at 0.5 microns but comparing the both materials -316 and-201 highest of deposition rate is obtained from SS-316.





M. M. Rahman et al., "Effects of Acetylene on Deposition Rate of Stainless Steels Using Thermal Chemical Vapor Deposition", International Journal of Engineering Research in Africa, Vol. 23, pp. 7-12, 2016

Online since:

April 2016




* - Corresponding Author

[1] Huge, O. Pierson., 1999, Handbook of Chemical Vapor Deposition, second edition, Noyes publications, Norwich, New York, U.S. A.

[2] Bunshah, R.F., 1994, Handbook of Deposition Technologies for films and Coatings, second edition, Noyes publications, New Jersey, U.S. A.

[3] Regel, L.L., and Wilcox, W.R., 2001, Diamond film Deposited by Chemical Vapor Transport, Acta Astronautica, 48: 129-144.

DOI: https://doi.org/10.1016/s0094-5765(00)00155-7

[4] Van der Werf, C.H.M., Goldbach, H.D., Löffler, J., Scarfó, A., Kylner, A.M.C., Stannowski, B., ArnoldBik, W.M., Weeber, A., Rieffe, H., Soppe, W.J., Rath, J.K., Schropp, R.E.I., 2006, Silicon nitride at high deposition rate by Hot Wire Chemical Vapor Deposition as passivating and antireflection layer on multicrystalline silicon solar cells, Thin Solid Films, 501: 51-54.

DOI: https://doi.org/10.1016/j.tsf.2005.07.107

[5] Stannowski, B., C, H.M., van der Werf., and R, E.I., Schropp., 2000, Hot-Wire Chemical-Vapour Deposition For Low-Temperature Deposition Of Silicon-NitrideLayers, Proc. of the 3rd Intern. Conf. on Coatings on Glass, Oct 29 - Nov 2, Maastricht, pp.387-394.

[6] William, N., Shafarman., and Jie, Zhu., 1998, Effect of Substrate Temperature and Deposition Profile on Evaporated Cu(Inga)Se2 Films And Devices, paper reference: 0-624 Institute of Energy Conversion University of Delaware, Newark, DE 19716 USA.

DOI: https://doi.org/10.1016/s0040-6090(99)00844-5

[7] Corata, E. J., and Goodwin, D. G., 1993, Temperature dependence of species concentrations near the substrate during diamond chemical vapor deposition, Journal of Applied Physics, 74: 2021-(2029).

DOI: https://doi.org/10.1063/1.354765

[8] Mark, C., McMaster, I., Wen, L., Hsuap, Michael. E., Coltrin, B., David, S. Dandy., Ciaran Fox, D., 1995, Dependence of the gas composition in a microwave plasma-assisted diamond chemical vapor deposition reactor on the inlet carbon source: CH, versus & Hz, Diamond and Related Materials 4: 1000-1008.

DOI: https://doi.org/10.1016/0925-9635(95)00270-7

[9] Yongqing Fu., Chang Q., Sun, Hejun Du., Bibo Yan., 2002, From diamond to crystalline silicon carbonitride: effect of introduction in CH4/H2 gas mixture using MW- PECVD, Surface & coating Technology, 160: 165-172.

DOI: https://doi.org/10.1016/s0257-8972(02)00418-8

[10] H. Rau, F. Picht, 1992, Rate limitation in low pressure diamond growth, Journal of Materials Research, 7: 934-939.

[11] D.W. Kweon, J.Y. Lee, D. Kim, 1991, The growth kinetics of diamond films deposited by hot-filament chemical vapor deposition, Journal of Applied Physics, 69: 8329-8335.

DOI: https://doi.org/10.1063/1.347445

[12] F.G. Celii, D. White Jr., A.J. Purdes, 1991, Effect of residence time on microwave plasma chemical vapor deposition of diamond, Journal of Applied Physics, 70: 5636-5646.

DOI: https://doi.org/10.1063/1.350179

[13] F.G. Celii, D. White Jr., A.J. Purdes, 1992, Deposition of smooth, oriented diamond films using microwave plasma chemical vapor deposition, Thin Solid Films , 212: 140-149. C.S. Ashley, U.S. Patent 6, 231, 666. (2001).

DOI: https://doi.org/10.1016/0040-6090(92)90512-a