Optical-Property Profiling of SiO2 Films Containing Si Nanocrystals Formed by Si+ Implantation

Abstract:

Article Preview

A quantitative approach to determination of depth profiles of optical properties of Si-implanted SiO2 films based on spectroscopic ellipsometry (SE) is presented. From the SE measurements, the depth profiles of the complex refractive index of SiO2 films containing Si nanocrystals (Si-nc) are obtained with an effective medium approximation (EMA) in the wavelength range of 400-1200nm. The optical profiles obtained imply the existence of a wave-guide in the Si-doped SiO2 films.

Info:

Edited by:

M. Gupta and Christina Y.H. Lim

Pages:

133-136

Citation:

Y. Liu et al., "Optical-Property Profiling of SiO2 Films Containing Si Nanocrystals Formed by Si+ Implantation", Journal of Metastable and Nanocrystalline Materials, Vol. 23, pp. 133-136, 2005

Online since:

January 2005

Export:

Price:

$38.00

[1] S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé and K. Chan: Appl. Phys. Lett., 68 (1996), p.1377.

DOI: https://doi.org/10.1063/1.116085

[2] E. Kapetanakis, P. Normand and D. Tsoukalas: Appl. Phys. Lett., 77 (2000), p.3450.

[3] N. Lalic, and J. Linnros: Journal of Luminescence, 80 (1999), p, 263.

[4] S. -H. Choi and R. G. Elliman: Appl. Phys. Lett., 75 (1999), p.968.

[5] F. Iacona, G. Franzò and C. Spinella: J. Appl. Phys., 87 (2000), p.1295.

[6] E. A. Irene, in In Situ real-time characterization of thin films, edited by O. Auciello and A. R. Krauss, (John Wiley & Sons, New York, 2001), pp.57-103.