Optical-Property Profiling of SiO2 Films Containing Si Nanocrystals Formed by Si+ Implantation

Abstract:

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A quantitative approach to determination of depth profiles of optical properties of Si-implanted SiO2 films based on spectroscopic ellipsometry (SE) is presented. From the SE measurements, the depth profiles of the complex refractive index of SiO2 films containing Si nanocrystals (Si-nc) are obtained with an effective medium approximation (EMA) in the wavelength range of 400-1200nm. The optical profiles obtained imply the existence of a wave-guide in the Si-doped SiO2 films.

Info:

Edited by:

M. Gupta and Christina Y.H. Lim

Pages:

133-136

DOI:

10.4028/www.scientific.net/JMNM.23.133

Citation:

Y. Liu et al., "Optical-Property Profiling of SiO2 Films Containing Si Nanocrystals Formed by Si+ Implantation", Journal of Metastable and Nanocrystalline Materials, Vol. 23, pp. 133-136, 2005

Online since:

January 2005

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Price:

$35.00

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