Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires

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Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm-1,which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev,1.42ev,1.47ev. Possible reason for these is suggested. PACS: 36.40._c; 81.15.Gh; 81.20._n

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Edited by:

M. Gupta and Christina Y.H. Lim

Pages:

137-140

Citation:

X.B. Zeng et al., "Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires", Journal of Metastable and Nanocrystalline Materials, Vol. 23, pp. 137-140, 2005

Online since:

January 2005

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$38.00

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