Electrical Characterization and Parameter Extraction of Junctionless Nanowire Transistors
This article presents a review of various methods for extracting the key parameters of junctionless (JL) MOSFETs, namely, the threshold voltage, flat-band voltage, doping concentration, carrier mobility, and parasitic series resistance. The applicability and limitations of different methods are analyzed using numerical simulations and experimental data for planar and tri-gate nanowire JL transistors with various nanowire widths.
Prof. Alexei N. Nazarov, Prof. Volodymyr S. Lysenko, Prof. Denis Flandre, Dr. Yuri V. Gomeniuk
T. Rudenko et al., "Electrical Characterization and Parameter Extraction of Junctionless Nanowire Transistors", Journal of Nano Research, Vol. 39, pp. 17-33, 2016