Electrical Properties of ZrO2 Thin Films Doped with In2O3 by Sol-Gel Method

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Periodical:

Key Engineering Materials (Volumes 169-170)

Edited by:

N. Mizutani, K. Shinozaki, N. Kamehara, T. Kimura

Pages:

175-178

DOI:

10.4028/www.scientific.net/KEM.169-170.175

Citation:

Y. Ohya et al., "Electrical Properties of ZrO2 Thin Films Doped with In2O3 by Sol-Gel Method", Key Engineering Materials, Vols. 169-170, pp. 175-178, 1999

Online since:

June 1999

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$35.00

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