Microwave Dielectric Properties of A-Site Modified Pb(Mg1/2W1/2)O3

Abstract:

Article Preview

The sintering behavior, microstructure and microwave dielectric properties of A-site modified Pb(Mg1/2W1/2)O3 with Ca2+, Ba2+and La3+ were investigated in this paper. It is discovered that a series of single-phase perovskite type solid solutions with A-site vacancies were formed for Pb1-3/2xLax(Mg1/2W1/2)O3 (0 £ x £ 2/3)). The solid solution took cubic perovskite type structure (Fm3m)with random distribution of A-site vacancies when 0 < x < 0.5, and tetragonal or orthorhombic structure with the ordering of A-site vacancies when 0.5 £ x £ 2/3. However, the solid solubility of Ba(Mg1/2W1/2)O3 and Ca(Mg1/2W1/2)O3 in Pb(Mg1/2W1/2)O3 is limited to 15 and 5 mol%, respectively, in spite of no structural difference between the end member. It was also found that the A-site substitution with Ca2+, Ba2+and La3+ for Pb2+ has no influences on the degree of B-site ordering between Mg2+ and W6+. However, the antiferroelectric Tc decreases with increase in the content of A-site substitution. The dielectric constants and temperature coefficient of resonant frequency of La3+ modified Pb(Mg1/2W1/2)O3 are much lower than that of. Ca2+and Ba2+ modified Pb(Mg1/2W1/2)O3, and decrease with increasing La content. However, its Q×f values is much higher than that of Ca2+and Ba2+ modified Pb(Mg1/2W1/2)O3, and increase with increase in La content. Relatively good combination microwave dielectric properties were obtained for Pb1-3/2xLax(Mg1/2W1/2)O3 with x=0.56: er=28.7, Q×f=18098, and tf=-5.8ppm/oC.

Info:

Periodical:

Key Engineering Materials (Volumes 280-283)

Edited by:

Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li

Pages:

1-4

Citation:

J. J. Bian et al., "Microwave Dielectric Properties of A-Site Modified Pb(Mg1/2W1/2)O3", Key Engineering Materials, Vols. 280-283, pp. 1-4, 2005

Online since:

February 2007

Export:

Price:

$38.00

[1] S.J. Penn, N.M. Alford, A. Templeton, X. Wang, M. Xu, M. Reece, and K. Schrapel: J. A. Ceram, Soc. Vol. 80 (1997), p.1885.

[2] S.Y. Cho, I.T. Kim and K.S. Hong: J. Mater. Res. Vol. 14 (1999), p.114.

[3] J. Kato, H. Kagaya and K. Nishimoto: Jpn. J. Appl. Phys. Vol. 31 (1992), p.3144.

[4] G. Baldinozzi, Ph. Sciau and P.A. Buffat: Solid State Communications Vol. 86 (1993), p.541.

[5] K. Z. Baba, G. Cressey and R.J. Cernik: Appl. Cryst. Vol. 25 (1992), p.477.

[6] J. H. Yang, H. J. Kim and W. K. Choo: Ferroelectrics Vol. 152 (1994), p.243.

[7] N. Yasuda, S . Fujimoto and T. Yoshimura: J. Phys. C: Solid State Phys. Vol. 19 (1986), p.1055.

[8] Y. Torii and T. Sekiya: Mat. Res. Bull. Vol. 16 (1981), p.1153.

Fetching data from Crossref.
This may take some time to load.