Solar Cells from Thin Silicon Layers on AlN
Polycrystalline silicon layers were grown on AlN ceramic substrates in a rapid thermal chemical vapor deposition system at high temperature (~1150°C). Larger columnar grains, > 5µm in size, were obtained by the zone melting recrystallization (ZMR) technique. The p-n junction is formed by a phosphorous diffusion process to make a solar cell. Solar cell devices based on this Si layer result possess an open-circuit voltage of about 0.17V and a short-circuit current of about 6.6mA/cm2.
Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li
Z. J. Wan et al., "Solar Cells from Thin Silicon Layers on AlN", Key Engineering Materials, Vols. 280-283, pp. 1161-1162, 2005