Solar Cells from Thin Silicon Layers on AlN


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Polycrystalline silicon layers were grown on AlN ceramic substrates in a rapid thermal chemical vapor deposition system at high temperature (~1150°C). Larger columnar grains, > 5µm in size, were obtained by the zone melting recrystallization (ZMR) technique. The p-n junction is formed by a phosphorous diffusion process to make a solar cell. Solar cell devices based on this Si layer result possess an open-circuit voltage of about 0.17V and a short-circuit current of about 6.6mA/cm2.



Key Engineering Materials (Volumes 280-283)

Edited by:

Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li




Z. J. Wan et al., "Solar Cells from Thin Silicon Layers on AlN", Key Engineering Materials, Vols. 280-283, pp. 1161-1162, 2005

Online since:

February 2007




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[2] M.E. Nell, A. Braun, B. von Ehrenwall, et al.: Mater. Sci. Eng. B Vol. 69-70 (2000), p.542. Fig. 5 I(V)-characteristic of the film-Si solar cell on the AlN substrate with an area of 1×1cm2.