Preparation and Dielectric Properties of SiC-AlN Solid Solutions
The microstructure and microwave dielectric properties of inhomogeneous SiC-AlN solid solutions, hot pressed under a pressure of 40 MPa, have been investigated. Microstructure analysis detected the existence of BN in the resulted samples, which may be a reason that homogeneous solid solution was not formed for the samples with AlN content higher than 20%. The dc resistivity of the solid solutions at room temperature varies from 8 × 103 Ω m to 1 × 109 Ω m. Ion jump and dipole relaxation losses are the main mechanism of dielectric losses.
Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li
X. Y. Zhang et al., "Preparation and Dielectric Properties of SiC-AlN Solid Solutions", Key Engineering Materials, Vols. 280-283, pp. 127-130, 2005