Preparation and Dielectric Properties of SiC-AlN Solid Solutions

Abstract:

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The microstructure and microwave dielectric properties of inhomogeneous SiC-AlN solid solutions, hot pressed under a pressure of 40 MPa, have been investigated. Microstructure analysis detected the existence of BN in the resulted samples, which may be a reason that homogeneous solid solution was not formed for the samples with AlN content higher than 20%. The dc resistivity of the solid solutions at room temperature varies from 8 × 103 Ω m to 1 × 109 Ω m. Ion jump and dipole relaxation losses are the main mechanism of dielectric losses.

Info:

Periodical:

Key Engineering Materials (Volumes 280-283)

Edited by:

Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li

Pages:

127-130

DOI:

10.4028/www.scientific.net/KEM.280-283.127

Citation:

X. Y. Zhang et al., "Preparation and Dielectric Properties of SiC-AlN Solid Solutions", Key Engineering Materials, Vols. 280-283, pp. 127-130, 2005

Online since:

February 2007

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Price:

$35.00

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