Preparation and Dielectric Properties of SiC-AlN Solid Solutions


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The microstructure and microwave dielectric properties of inhomogeneous SiC-AlN solid solutions, hot pressed under a pressure of 40 MPa, have been investigated. Microstructure analysis detected the existence of BN in the resulted samples, which may be a reason that homogeneous solid solution was not formed for the samples with AlN content higher than 20%. The dc resistivity of the solid solutions at room temperature varies from 8 × 103 Ω m to 1 × 109 Ω m. Ion jump and dipole relaxation losses are the main mechanism of dielectric losses.



Key Engineering Materials (Volumes 280-283)

Edited by:

Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li




X. Y. Zhang et al., "Preparation and Dielectric Properties of SiC-AlN Solid Solutions", Key Engineering Materials, Vols. 280-283, pp. 127-130, 2005

Online since:

February 2007




[1] J.L. Huang and J.M. Jih: J. Mater. Res. Vol. 10 (1995), p.651.

[2] J.L. Huang and J.M. Jih: J. Am. Ceram. Soc. Vol. 79 (1996), p.1262.

[3] A.H. Lubis, N. L. Hecht and G.A.G. Jr: J. Am. Ceram. Soc. Vol. 82 (1999), p.2481.

[4] M. Landon and F. Thevenot: J. Eur. Ceram. Soc. Vol. 8 (1991), p.271.

[5] A. Zangvil and R. Ruh: J. Am. Ceram. Soc. Vol. 71 (1988), p.884.

[6] W.D. Kingery, H. K. Bowen and D.R. Uhlmann: Introduction to Ceramics (John Wiley & Sons, New York, 1976).

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