Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O3 Films on Silicon Wafers

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Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.

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Periodical:

Key Engineering Materials (Volumes 280-283)

Edited by:

Wei Pan, Jianghong Gong, Chang-Chun Ge and Jing-Feng Li

Pages:

239-242

Citation:

W. Gong et al., "Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O3 Films on Silicon Wafers", Key Engineering Materials, Vols. 280-283, pp. 239-242, 2005

Online since:

February 2007

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$38.00

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DOI: https://doi.org/10.1063/1.366614