Effect of Carbon Black Addition on Reaction-Bonded Silicon Carbide Ceramics

Abstract:

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High strength reaction-bonded silicon carbide ceramics was successfully produced by reducing the amount of residual silicon and the silicon pocket size with carbon black as an additional carbon source. A prototype of wafer carrier was also produced in near-net dimension by planar contact infiltration of molten silicon into a preform joined with six pieces of simple shape by eliminating process shrinkages. Forming shrinkages were decreased to a negligible level by compression molding, while sintering shrinkage was eliminated by reactive infiltration of molten silicon.

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Periodical:

Edited by:

Hai-Doo Kim, Hua-Tay Lin and Michael J. Hoffmann

Pages:

189-193

DOI:

10.4028/www.scientific.net/KEM.287.189

Citation:

J. S. Kim et al., "Effect of Carbon Black Addition on Reaction-Bonded Silicon Carbide Ceramics", Key Engineering Materials, Vol. 287, pp. 189-193, 2005

Online since:

June 2005

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$38.00

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