Labeled Weibull Plot of a C-Derived Si3N4-SiC Nanocomposite

Abstract:

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Four-point bending strength and Weibull distribution of the strength values of a carbon derived Si3N4-SiC nanocomposite have been investigated. The fracture origins were identified and characterized and a “labeled Weibull plot” was constructed. The fracture origins are surface, subsurface and volume located technological defects with a dimension from 10 µm to 180 µm, mainly in the form of cluster of pores and large SiC grains.

Info:

Periodical:

Edited by:

J. Dusza, R. Danzer and R. Morrell

Pages:

292-295

DOI:

10.4028/www.scientific.net/KEM.290.292

Citation:

M. Kašiarová et al., "Labeled Weibull Plot of a C-Derived Si3N4-SiC Nanocomposite ", Key Engineering Materials, Vol. 290, pp. 292-295, 2005

Online since:

July 2005

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Price:

$35.00

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