Ellipsometric Detection of Transitional Surface Structures on Decapped GaAs(001)

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Structural and optical properties of MBE-grown GaAs(001) surface have been studied by reflection high-energy electron diffraction and single-wavelength ellipsometry under dynamic conditions of ramp heating after desorption of passivating As-cap-layer with and without As4 beam applied to the surface. For a number metastable reconstruction transitions, a clear correlation is established between diffraction and optical data. Boundary lines for transitional superstructures are determined as a function of As flux and corresponding activation energies are estimated. For the first time it is ellipsometrically shown that optical response of the surface is drastically different for transitions of the order-order and order-disorder type.

Info:

Periodical:

Key Engineering Materials (Volumes 295-296)

Edited by:

Yongsheng Gao, Shuetfung Tse and Wei Gao

Pages:

45-50

DOI:

10.4028/www.scientific.net/KEM.295-296.45

Citation:

A.V. Vasev and S.I. Chikichev, "Ellipsometric Detection of Transitional Surface Structures on Decapped GaAs(001)", Key Engineering Materials, Vols. 295-296, pp. 45-50, 2005

Online since:

October 2005

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$38.00

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DOI: 10.1016/0040-6090(95)06665-9

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