Microcracking in Monocrystalline Silicon due to Indentation and Scratching
This paper discusses the cracking in monocrystalline silicon induced by microindentation with spherical and Berkovich indenters and scratching. It was found cracks always commenced in a specimen’s subsurface beneath the transformation zone. While using a Berkovich indenter the level of the maximum indentation load, Pmax, to initiate microcracking was lower than the case with a spherical indenter. In both indentation and scratching all microcracks took place at the sites of slip intersection or emanated from the bottom of a transformation zone. The paper also discussed critical loads for microcracking.
Hong-Yuan Liu, Xiaozhi Hu and Mark Hoffman
I. Zarudi and L. C. Zhang, "Microcracking in Monocrystalline Silicon due to Indentation and Scratching", Key Engineering Materials, Vol. 312, pp. 345-350, 2006