Electrically Conductive Aluminum Nitride Ceramics Containing In-Situ Synthesized Boron Carbonitride
Electrically conductive AlN ceramics were fabricated by the addition of a small amount of B4C and sintering aid, and hot-press sintering in a nitrogen atmosphere. The electrical resistivity of AlN ceramics decreased remarkably from 1014 cm to the range of 100 to 102 cm by a minimum of 2.3 wt% of B4C addition. This resistivity decrease was caused by forming three-dimensional networks composed of boron carbonitride (B-C-N) platelets synthesized during sintering. To produce the networks of B-C-N platelets, two-step sintering with a heat-treatment step at 1600°C before the densification step at 2000°C was needed.
T. Ohji, T. Sekino and K. Niihara
J. Yoshikawa, Y. Katsuda, N. Yamada, H. Sakai, "Electrically Conductive Aluminum Nitride Ceramics Containing In-Situ Synthesized Boron Carbonitride", Key Engineering Materials, Vols. 317-318, pp. 653-656, 2006