Magnetic and Electronic Properties of Transition Metal Doped β-SiC - A Diluted Magnetic Semiconductor

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We used ab initio pseudopotential plane wave methods to study the magnetic and electronic properties of transition-metal doped ¯-SiC. It is found that the SiC:Cr reveals stable ferromagnetism with permanent magnetic moments as large as 2 μB regardless of substitution site. In addition, the SiC:CrSi is predicted to have good electron mobility and wide spin band-gap of 1.58 eV with the Fermi level at the center of the gap, which is desirable for realizing spintronic devices.

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Periodical:

Key Engineering Materials (Volumes 317-318)

Edited by:

T. Ohji, T. Sekino and K. Niihara

Pages:

889-892

DOI:

10.4028/www.scientific.net/KEM.317-318.889

Citation:

Y. S. Kim et al., "Magnetic and Electronic Properties of Transition Metal Doped β-SiC - A Diluted Magnetic Semiconductor", Key Engineering Materials, Vols. 317-318, pp. 889-892, 2006

Online since:

August 2006

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Price:

$35.00

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