Magnetic and Electronic Properties of Transition Metal Doped β-SiC - A Diluted Magnetic Semiconductor


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We used ab initio pseudopotential plane wave methods to study the magnetic and electronic properties of transition-metal doped ¯-SiC. It is found that the SiC:Cr reveals stable ferromagnetism with permanent magnetic moments as large as 2 μB regardless of substitution site. In addition, the SiC:CrSi is predicted to have good electron mobility and wide spin band-gap of 1.58 eV with the Fermi level at the center of the gap, which is desirable for realizing spintronic devices.



Key Engineering Materials (Volumes 317-318)

Edited by:

T. Ohji, T. Sekino and K. Niihara




Y. S. Kim et al., "Magnetic and Electronic Properties of Transition Metal Doped β-SiC - A Diluted Magnetic Semiconductor", Key Engineering Materials, Vols. 317-318, pp. 889-892, 2006

Online since:

August 2006




[1] H. Ohno: Science Vol. 281 (1998), p.951.

[2] Y. -S. Kim, H. Kim, and Y. -C. Chung: Nanotech 2003 Vol. 3 (2003), p.519.

[3] Y. -S. Kim, H. Kim, B. D. Yu, D. K. Choi, and Y. -C. Chung: Key Eng. Mater. Vol. 264-268 (2004), p.1237.

[4] V. L. Shaposhnikov and N. A. Sobolev: J. Phys.: Condens. Matter Vol. 16 (2004), p.1761.

[5] M. S. Miao and Walter R. L. Lambrencht: Phys. Rev. B Vol. 68 (2003), p.125204.

[6] L. V. C. Assali, W. V. M. Machado, and J. F. Justo: Phys. Rev. B Vol. 69 (2004), p.155212.

[7] N. Theodoropoulou, A. F. Hebard, S. N. G. Chu, M. E. Overberg, C. R. Abernathy, S. J. Pearton, R. G. Wilson, and J. M. Zavada: Electrochem. Solid-State Lett. Vol. 4 (2001), p. G119.


[8] S. J. Pearton, Y. D. Park, C. R. Abernathy, M. E. Overberg, G. T. Thaler, J. Kim, F. Ren, J. M. Zavada, and R. G. Wilson: Thin Solid Films Vol. 447-448 (2004), p.493.


[9] J. P. Perdew, J. A. Chevary, S. H. Vosko, K. A. Jackson, M. R. Pederson, D. J. Singh, and C. Fiolhais: Phys. Rev. B Vol. 46 (1992), p.6671.

[10] G. Kresse and J. Furthm¨uller: Vienna Ab initio Simulation Package (Univ. of Wien, Vienna 2001).

[11] G. Kresse and J. Hafner: Phys. Rev. B Vol. 47 (1993), p. RC558.

[12] D. Vanderbilt: Phys. Rev. B Vol. 41 (1990), p.7892.

[13] H. J. Monkhorst and J. D. Pack: Phys. Rev. B Vol. 13 (1976), p.5188.

[14] O. Madelung, M. Schulz, and H. Weiss: Numerical data and Functional Relationship in Science and Technology, Landolt-B¨ornstein New Series Group III, Vol. 17a, (Springer-Verlag, New York 1982).

[15] N. W. Jepps and T. F. Page: Prog. Cryst. Growth Charact. Vol. 7 (1983), p.259 This article was processed using the LATEX macro package with TTP style.

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