Magnetic and Electronic Properties of Transition Metal Doped β-SiC - A Diluted Magnetic Semiconductor
We used ab initio pseudopotential plane wave methods to study the magnetic and electronic properties of transition-metal doped ¯-SiC. It is found that the SiC:Cr reveals stable ferromagnetism with permanent magnetic moments as large as 2 μB regardless of substitution site. In addition, the SiC:CrSi is predicted to have good electron mobility and wide spin band-gap of 1.58 eV with the Fermi level at the center of the gap, which is desirable for realizing spintronic devices.
T. Ohji, T. Sekino and K. Niihara
Y. S. Kim et al., "Magnetic and Electronic Properties of Transition Metal Doped β-SiC - A Diluted Magnetic Semiconductor", Key Engineering Materials, Vols. 317-318, pp. 889-892, 2006