Synthesis of Oxide Thin Films on Silicon Substrate Using Supercritical Carbon Dioxide Fluid


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Thin films of titanium oxide (TiO2) were synthesized from Titanium diisopropoxide bis(dipivaloylmethanate) [Ti(O-i-Pr)2(dpm)2] as a source material using supercritical carbon dioxide (CO2) fluid. Flat films with a uniform microstructure were fabricated on SiO2/(100)Si substrates at a fluid pressure of 8.0 MPa, while granular particles were deposited on the film surface at a fluid pressure of 10.0 MPa. TiO2 films fabricated in supercritical CO2 atmosphere at 10.0 MPa were crystalline at the reaction temperature of 100°C, which was significantly lower than those in the conventional film-deposition techniques.



Edited by:

Keiichi Katayama, Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki




F. Kano et al., "Synthesis of Oxide Thin Films on Silicon Substrate Using Supercritical Carbon Dioxide Fluid", Key Engineering Materials, Vol. 320, pp. 91-94, 2006

Online since:

September 2006




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