Synthesis of Oxide Thin Films on Silicon Substrate Using Supercritical Carbon Dioxide Fluid

Abstract:

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Thin films of titanium oxide (TiO2) were synthesized from Titanium diisopropoxide bis(dipivaloylmethanate) [Ti(O-i-Pr)2(dpm)2] as a source material using supercritical carbon dioxide (CO2) fluid. Flat films with a uniform microstructure were fabricated on SiO2/(100)Si substrates at a fluid pressure of 8.0 MPa, while granular particles were deposited on the film surface at a fluid pressure of 10.0 MPa. TiO2 films fabricated in supercritical CO2 atmosphere at 10.0 MPa were crystalline at the reaction temperature of 100°C, which was significantly lower than those in the conventional film-deposition techniques.

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Periodical:

Edited by:

Keiichi Katayama, Kazumi Kato, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki

Pages:

91-94

DOI:

10.4028/www.scientific.net/KEM.320.91

Citation:

F. Kano et al., "Synthesis of Oxide Thin Films on Silicon Substrate Using Supercritical Carbon Dioxide Fluid", Key Engineering Materials, Vol. 320, pp. 91-94, 2006

Online since:

September 2006

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$35.00

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