Physical vapor deposition technique has been employed to develop a thin film of OLED, and atomic force microscopy was used to investigate the boundary characteristics such as uniformity of emitting layer, roughness, and surface morphology. In order to determine the deposition characteristic which associated with the materials failure in OLED, finite element simulation, together with alternative analytical modeling has been carried out by means of island growth mechanism analysis. The boundary growth of thin film can be determined from the velocity of island boundary using simple rate equations. The results obtained are compared with experimental observation. Generally good agreement has been achieved.