Crystal Plasticity Analysis of Thermal Deformation and Dislocation Accumulation in ULSI Cells


Article Preview

Thermal stress, plastic slip deformation and accumulation of dislocations in shallow trench isolation (STI) type ULSI devices when the temperature drops from 1000 し to room temperature are analyzed by a crystal plasticity analysis cord. The results show that dislocation accumulation takes place at the temperature range over 800 し, and the difference of 6 MPa in the lattice friction stress at 1000 し!causes increase of dislocation density more than 1.6 times. Dislocations generate and accumulate at the shoulder part of the device area and bottom corners of the trench. Dislocations are categorized into two groups. In one group, dislocation lines are mostly straight and parallel to the trench direction, and in the other group, dislocations make half loop type structure. Possibilities for the suppression of dislocation accumulation through control of lattice friction stress at high temperature region are discussed.



Key Engineering Materials (Volumes 324-325)

Edited by:

M.H. Aliabadi, Qingfen Li, Li Li and F.-G. Buchholz




M. Sato et al., "Crystal Plasticity Analysis of Thermal Deformation and Dislocation Accumulation in ULSI Cells ", Key Engineering Materials, Vols. 324-325, pp. 1035-1038, 2006

Online since:

November 2006




[1] Ohashi, T., Phil. Mag. Lett., 75(1997), 51.

[2] Ohashi, T., Int. J. Plasticity, 21(2005), (2071).

[3] Semiconductors Handbook, revised ed., edited by Semiconductors Handbook Compilation Committee, Ohm-sha Publishing, Tokyo, 1977, p.135.

[4] Encyclopedia for Physics and Chemistry, 3 rd ed., edited by B. Tamamushi, Iwanami Publishing, Tokyo, 1981, p.1068, 1151.

[5] Properties of Silicon, EMIS DATA REVIEWS SERIES No. 4, AHMED, H. , INSPEC, �1988�, 22.

Fetching data from Crossref.
This may take some time to load.