Direct CTE Measurement Technique for the MEMS Materials

Abstract:

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The accurate characterization of linear coefficient of thermal expansion (CTE) of thin films is vital for predicting the thermal stress, which often results in warpage and failure of a MEMS structure. In this paper, special emphasis is placed on the development of novel test method to extend an ISDG (Interferometric Strain/Displacement Gage) technique to the direct and accurate CTE measurement of MEMS materials, AlN and Au. The freestanding AlN and Au films are 1 μm thick and 5 mm wide. Strain is directly measured by a brand-new digital type ISDG with two Cr lines deposited on the specimen while heating a specimen in a furnace. The whole test system is verified first by measuring the CTE for the NIST’s SRM (Standard Reference Material) 736 (Cu) block. The measured CTE is 17.3 με/oC up to 167 oC, which agrees well with the NIST’s certified value. The CTE of Au is 25.4 ± 1.15 με/oC and that of AlN film is 3.77 ± 0.12 με/oC. The in-plane displacement resolution is about 5 nm at the best circumstances.

Info:

Periodical:

Key Engineering Materials (Volumes 326-328)

Edited by:

Soon-Bok Lee and Yun-Jae Kim

Pages:

199-202

DOI:

10.4028/www.scientific.net/KEM.326-328.199

Citation:

C. S. Oh et al., "Direct CTE Measurement Technique for the MEMS Materials", Key Engineering Materials, Vols. 326-328, pp. 199-202, 2006

Online since:

December 2006

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Price:

$35.00

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