Reliability of Hermetic RF MEMS Wafer Level Packaging Using Au-Sn Eutectic Bonding


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In this paper, a low temperature hermetic wafer level packaging scheme for the RFMEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 %m in width is performed. The size of the MEMS package is 1mm × 1mm × 700 %m. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. The total insertion loss for the packaging is 0.075 dB at 2 GHz.



Key Engineering Materials (Volumes 326-328)

Edited by:

Soon-Bok Lee and Yun-Jae Kim




Q. Wang et al., "Reliability of Hermetic RF MEMS Wafer Level Packaging Using Au-Sn Eutectic Bonding", Key Engineering Materials, Vols. 326-328, pp. 609-612, 2006

Online since:

December 2006




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