Reliability of Hermetic RF MEMS Wafer Level Packaging Using Au-Sn Eutectic Bonding

Abstract:

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In this paper, a low temperature hermetic wafer level packaging scheme for the RFMEMS devices is presented. For hermetic sealing, Au-Sn multilayer metallization with a square loop of 70 %m in width is performed. The size of the MEMS package is 1mm × 1mm × 700 %m. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. The total insertion loss for the packaging is 0.075 dB at 2 GHz.

Info:

Periodical:

Key Engineering Materials (Volumes 326-328)

Edited by:

Soon-Bok Lee and Yun-Jae Kim

Pages:

609-612

DOI:

10.4028/www.scientific.net/KEM.326-328.609

Citation:

Q. Wang, S. H. Choa, W. B. Kim, J. S. Hwang, S. J. Ham, C. Y. Moon, "Reliability of Hermetic RF MEMS Wafer Level Packaging Using Au-Sn Eutectic Bonding", Key Engineering Materials, Vols. 326-328, pp. 609-612, 2006

Online since:

December 2006

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Price:

$35.00

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