Wafer Level Hermetic Packaging for RF-MEMS Devices Using Electroplated Gold Layers

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Thermocompression bonding of electroplated gold is a promising technique for achieving low temperature, wafer level hermetic bonding without the application of an electric field or high temperature. Silicon wafers were completely bonded at 320 at a pressure of 2.5. The interconnection between the packaged devices and external terminal did not need metal filling and was made by gold films deposited on the sidewall of the via-hole. In the hermeticity test, packaged wafers had the leak rate of 2.74 ± 0.61 × 10-11 Pa m3/s. In the result of application in packaging of FBAR filter, the insertion loss is increased from -0.75dB to -1.09dB at 1.9.

Info:

Periodical:

Key Engineering Materials (Volumes 326-328)

Edited by:

Soon-Bok Lee and Yun-Jae Kim

Pages:

617-620

DOI:

10.4028/www.scientific.net/KEM.326-328.617

Citation:

G. S. Park et al., "Wafer Level Hermetic Packaging for RF-MEMS Devices Using Electroplated Gold Layers", Key Engineering Materials, Vols. 326-328, pp. 617-620, 2006

Online since:

December 2006

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$35.00

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