Experimental and Simulation Research on Influence of Temperature on Nano-Scratching Process of Silicon Wafer
This study aims to clarify the interaction between Si wafer and individual diamond abrasives in grinding at nanometer level and to estimate the grinding conditions for minimizing the surface defect. This paper reports on the results obtained through nano-scratching experiments in vacuum by an atomic force microscope (AFM) and simulations by using the molecular dynamics method by applying Tersoff potential for Si-Si atomic interaction under room and high temperature, respectively, to examine the influence of the grinding heat on the materials removal process. As a result, it was proven that the scratch groove under high temperature becomes deeper than that under room temperature from the experiments, and it was also observed that the formation of the amorphous phase around the scratch groove under high temperature becomes a little bit larger than that under room temperature from the simulations.
Dongming Guo, Tsunemoto Kuriyagawa, Jun Wang and Jun’ichi Tamaki
H. Okabe et al., "Experimental and Simulation Research on Influence of Temperature on Nano-Scratching Process of Silicon Wafer", Key Engineering Materials, Vol. 329, pp. 379-384, 2007