Experimental and Simulation Research on Influence of Temperature on Nano-Scratching Process of Silicon Wafer

Abstract:

Article Preview

This study aims to clarify the interaction between Si wafer and individual diamond abrasives in grinding at nanometer level and to estimate the grinding conditions for minimizing the surface defect. This paper reports on the results obtained through nano-scratching experiments in vacuum by an atomic force microscope (AFM) and simulations by using the molecular dynamics method by applying Tersoff potential for Si-Si atomic interaction under room and high temperature, respectively, to examine the influence of the grinding heat on the materials removal process. As a result, it was proven that the scratch groove under high temperature becomes deeper than that under room temperature from the experiments, and it was also observed that the formation of the amorphous phase around the scratch groove under high temperature becomes a little bit larger than that under room temperature from the simulations.

Info:

Periodical:

Edited by:

Dongming Guo, Tsunemoto Kuriyagawa, Jun Wang and Jun’ichi Tamaki

Pages:

379-384

DOI:

10.4028/www.scientific.net/KEM.329.379

Citation:

H. Okabe et al., "Experimental and Simulation Research on Influence of Temperature on Nano-Scratching Process of Silicon Wafer", Key Engineering Materials, Vol. 329, pp. 379-384, 2007

Online since:

January 2007

Export:

Price:

$38.00

[1] H. Eda, L. Zhou, H. Nakano, R. Kondo, J. Shimizu: Development of Single Step Grinding System for Large Scale φ300 Si Wafer: A Total Integrated Fixed-Abrasive Solution, Annals of the CIRP, Vol. 50 (2001), pp.225-228.

DOI: 10.1016/s0007-8506(07)62110-6

[2] T.R. Anthony: Anodic bonding of imperfect surfaces, J. Appl. Phys., Vol. 54 (1983) pp.2419-2428.

[3] W. C. D. Cheong, L. C. Zhang: Molecular Dynamics Simulation of Phase Transformations in Silicon Monocrystals due to Nano-indentation, Nanotechnology, Vol. 11 (2000), pp.173-180.

DOI: 10.1088/0957-4484/11/3/307

[4] T. Inamura, S. Shimada, N. Takezawa, N. Nakahara: Brittle/ductile Transition Phenomena Observed in Computer Simulations of Machining Defect-free Monocrystalline Silicon, Annals of the CIRP Vol. 46 (1997), pp.31-34.

DOI: 10.1016/s0007-8506(07)60769-0

[5] T. Inamura, Y. F. Guo, N. Takezawa: Effect of Surface Oxidation on Micromachinability of Monocryatalline Silicon, Annals of the CIRP Vol. 50 (1997), pp.31-34.

[6] H. Tanaka, S. Shimada and N Ikawa: Brittle-Ductile Transition in Monocrystalline Silicon Analyzed by Molecular Dynamics Simulation, Journal of Mechanical Engineering Science, Proceedings of the Institution of Mechanical Engineering Part C, Vol. 218 (2004).

DOI: 10.1243/095440604774202213

[7] K. Cheng., X. Luo, R. Ward, R. Holt: Modeling and Simulation of the Tool Wear in Nanometric Cutting, Wear Vol. 255 (2003), pp.1427-1432.

DOI: 10.1016/s0043-1648(03)00178-9

[8] X. S. Han, B. Lin S. Y. Yu, S. X. Wang: Investigation of Tool Geometry in Nanometric Cutting by Molecular Dynamics Simulation, Journal of Materials Processing Technology, Vol. 129 (2002), pp.105-108.

DOI: 10.1016/s0924-0136(02)00585-x

[9] F. Z. Fang, H. Wu, Y. C. Liu: Modelling and Experimental Investigation on Nanometric Cutting of Monocrystalline Silicon, International Journal of Machine Tools & Manufacture Vol. 45 (2005), pp.1681-1686.

DOI: 10.1016/j.ijmachtools.2005.03.010

[10] W. G. Hoover: Molecular Dynamics, (Springer-Verlag, Berlin, 1986).

[11] J. Tersoff: Empirical Interatomic Potential for Silicon with Improved Elastic Properties, Phys. Rev. B, Vol. 38 (1988), pp.9902-9905.

DOI: 10.1103/physrevb.38.9902

[12] L.A. Girifalco, V.G. Weizer: Application of the Morse Potential Function to Cubic Metals, Phys. Rev., Vol. 114 (1959), pp.687-690.

DOI: 10.1103/physrev.114.687

In order to see related information, you need to Login.