Study on Ferroelectric Properties of Nd-Doped Bi4Ti3O12 Thin Films Prepared by Sol-Gel Method


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Nd-doped bismuth titanate Bi4-xNdxTi3O12 (BNT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by sol-gel method and spin-coating technique. The structures and the ferroelectric properties of the films were investigated. Nd doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 260 kV/cm, Pr and Ec of the BNT film with x=0.5 annealed at 650oC are 19 μC/cm2 and 135 kV/cm, respectively. Moreover, the BNT film with x=0.5 showed a fatiguefree behavior up to 3×1010 read/write cycles.



Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong




Y.H. Sun et al., "Study on Ferroelectric Properties of Nd-Doped Bi4Ti3O12 Thin Films Prepared by Sol-Gel Method", Key Engineering Materials, Vols. 336-338, pp. 146-148, 2007

Online since:

April 2007




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