Fabrication of SiCN MEMS by UV Lithography of Polysilazane
A novel process with low cost to fabricate SiCN MEMS based on UV lithographic technique is present in this paper. The prepared MEMS are very promising to be used in high-temperature environments. By adding a photo initiator to the polysilazane precursor, the precursor becomes UV-sensitive and can be solidified upon exposure to UV light, which leads to the formation of UV photo lithographical patterns. Key issues of the fabrication process are investigated and various SiCN MEMS structures are fabricated by this technique.
Wei Pan and Jianghong Gong
H. T. Wang et al., "Fabrication of SiCN MEMS by UV Lithography of Polysilazane", Key Engineering Materials, Vols. 336-338, pp. 1477-1480, 2007