Dielectric Characterization and Microstructures of Pr6O11-Doped Bi4Ti3O12 Thin Films

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Pr6O11-doped bismuth titanate and random oriented BixPryTi3O12 ( y = 0.3, 0.6, 0.9, 1.2) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. Pr doping into BIT caused a shift of the Curie temperature (TC) of the BIT from 675°C to 578 , 517, 398 , and 315oC for the films with y = 0.3, 0.6, 0.9, and 1.2, respectively. The experimental results indicated that Pr doping into BIT result in a remarkable improvement in dielectric properties. Raman analysis shows that Pr3+ and Pr4+ ions substitution only appears in A-sit.

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Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

155-157

DOI:

10.4028/www.scientific.net/KEM.336-338.155

Citation:

M. Chen et al., "Dielectric Characterization and Microstructures of Pr6O11-Doped Bi4Ti3O12 Thin Films", Key Engineering Materials, Vols. 336-338, pp. 155-157, 2007

Online since:

April 2007

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$35.00

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