Sintering and Dielectric Properties of Excess Bi2O3 Doped BaBi2Nb2O9 Ceramics

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In this study, ferroelectric materials with Bi-layered structure BaBi2Nb2O9 with excess x wt% Bi2O3 (x=0, 1.5, and 3) are investigated as the main compositions, and the sintering is proceeded from 1000oC~1100oC. The effect of Bi2O3 on the morphologies, crystal structure, and dielectric characteristics of BaBi2Nb2O9 ceramics is developed with the aid of SEM, X-ray diffraction, and dielectric-temperature curves. Dielectric properties are investigated in the temperature of 25oC~ 465oC at frequency 10KHz~1MHz. It is found that sintering temperature and Bi2O3 content has no apparent influence on the Curie temperatures, but they have large influence on the maximum dielectric constants.

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Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

188-191

DOI:

10.4028/www.scientific.net/KEM.336-338.188

Citation:

H. H. Chung et al., "Sintering and Dielectric Properties of Excess Bi2O3 Doped BaBi2Nb2O9 Ceramics", Key Engineering Materials, Vols. 336-338, pp. 188-191, 2007

Online since:

April 2007

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$35.00

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