Effects of Rare Earth Gd Doping on Ferroelectric Properties of PbZr0.52Ti0.48O3 Thin Films Prepared by Sol–Gel Methods

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The Pb(Zr0.52Ti0.48)O3 thin films with 0-2at.%Gd dopants (denoted as PGZT) were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel technique and a rapid thermal annealing process. The structures of PGZT films were characterized and the ferroelectric properties such as P–V loop, C–V and I–V characteristics were investigated. Improved polarization (2Pr = 46.373 μC/cm2) and the low leakage current (J = 1.5×10-9 A/cm2 at the electric field of 400 kV/cm) were obtained in the PZT thin film with 1at.% Gd dopant, which was better than that of the pure PZT thin film (2Pr = 39.099 μC/cm2, J = 4.3×10-8A/cm2). With the Gd contents up to 2at.%, a decreased remanent polarization was found.

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Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

21-23

DOI:

10.4028/www.scientific.net/KEM.336-338.21

Citation:

Q. Sun et al., "Effects of Rare Earth Gd Doping on Ferroelectric Properties of PbZr0.52Ti0.48O3 Thin Films Prepared by Sol–Gel Methods", Key Engineering Materials, Vols. 336-338, pp. 21-23, 2007

Online since:

April 2007

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$35.00

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