Effects of Processing Conditions on the Dielectric Properties of CaCu3Ti4O12 Ceramics

Abstract:

Article Preview

In this present work, we adopt conventional solid state reaction techniques to obtain CaCu3Ti4O12 (CCTO) ceramics and the dielectric properties of polycrystalline CCTO samples sintered in the temperature range 900 − 1100°C were investigated. X-ray diffraction (XRD) patterns show no obvious change in crystal phase with various sintering temperature. However, experimental results show that the dielectric properties of CCTO ceramics are very sensitive to processing parameters and the dependence of dielectric constant and loss tangent of CCTO ceramic on processing can be obtained. The effect of sintering conditions on the surface microstructures and the electrical properties of CCTO ceramics are also discussed in this study.

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

210-212

DOI:

10.4028/www.scientific.net/KEM.336-338.210

Citation:

C. M. Wang et al., "Effects of Processing Conditions on the Dielectric Properties of CaCu3Ti4O12 Ceramics", Key Engineering Materials, Vols. 336-338, pp. 210-212, 2007

Online since:

April 2007

Export:

Price:

$35.00

[1] S. Ezhilvalavan and T.Y. Tseng: Mat. Chem. Phys. Vol. 65 (2000), p.227.

[2] L.C. Kretly, A.F.L. Almeida, R.S. de Oliveira, J.M. Sasaki and A.S.B. Sombra: Microw. Opt. Technol. Lett. Vol. 39 (2003), p.145.

[3] L.C. Kretly, A.F. Almeida, P.B.A. Fechine, R.S. de Oliveira and A.S.B. Sombra: J. Mater. Sci. Mater. Electron. Vol. 16 (2004), p.657.

[4] A. Deschanvres, B. Raveau and F. Tollemer: Bull. Soc. Chim. Fr. (1967), p.4077.

[5] B. Bochu, M.N. Deschizeaux and J.C. Joubert: J. Solid State Chem. Vol. 29 (1979), p.291.

[6] M.A. Subramanian, D. Li, N. Duan, B.A. Reisner and A.W. Sleight: J. Solid State Chem. Vol. 151 (2000), p.323.

[7] S.M. Moussa and B.J. Kennedy: Mater. Res. Bull. Vol. 36 (2001), p.2525.

[8] W. Kobayashi and I. Terasaki: Physica B Vol. 329 (2003), p.771.

[9] D.C. Sinclair, T.B. Adams, F.D. Morrison and A.R. West: Appl. Phys. Lett. Vol. 80 (2002), p.2153.

[10] R.N. Choudhary and U. Bhunia: J. Mater. Sci. Vol. 37 (2002), p.5177.

[11] T.B. Adams, D.C. Sinclair and A.R. West: Adv. Mater. Vol. 14 (2002), p.1321.

[12] H. Birey: J. Appl. Phys. Vol. 49 (1978), p.2898.

[13] J. Li, K. Cho, N. Wu and A. Ignatiev: IEEE Trns. Dielectr. Electr. Insul. Vol. 11 (2004), p.534.

[14] C.C. Homes, T. Vogt, S.M. Shapiro, S. Wakimoto and A.P. Ramirez: Science Vol. 293 (2001), p.673.

[15] V.V. Daniel: Dielectric Relaxation (Academic Press, New York 1967).

In order to see related information, you need to Login.