Structure and Optical Properties of Si Films Deposited by Inductively Coupled Plasma CVD at Room Temperature

Abstract:

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Si films were deposited by inductively coupled plasma chemical vapor deposition at room temperature with a mixture of SiH4/H2. The microstructure of the film was characterized with Fourier transform of infrared, Raman spectroscopy, atomic force microscopy. We found that SiH4 concentration strongly affects the structure of Si films and nano-crystalline film can be synthesized at room temperature by optimizing the silane concentration. The analysis for optical properties of the films suggested that the optical band gap EOPT of films are distinctively lower than those of amorphous Si films. It has been observed that the EOPT of sample decreases with the increasing of H content in film.

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

2228-2231

DOI:

10.4028/www.scientific.net/KEM.336-338.2228

Citation:

X. Q. Wang, D. Y. He, J. S. Li, "Structure and Optical Properties of Si Films Deposited by Inductively Coupled Plasma CVD at Room Temperature", Key Engineering Materials, Vols. 336-338, pp. 2228-2231, 2007

Online since:

April 2007

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$35.00

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