Investigation of High-Quality ZnO Film on Polycrystalline Diamond Wafer for Fabrication of High Frequency SAW Filter

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ZnO films with piezoelectric properties were deposited on polycrystalline diamond wafers for high frequency surface acoustic wave filter applications by dc reactive magnetron sputtering. The influences of different sputtering pressures and substrate temperatures on the properties of ZnO films were discussed. Highly c-axis oriented, fine-grain ZnO films with excellent surface flatness (average surface roughness of 5.3 nm) and high resistivities (6.3×107 *·cm) have been obtained. Then Al films for interdigital-transducer were deposited on ZnO/diamond by electron evaporation, a 2.48 GHz longitudinally- coupled double-mode surface acoustic wave filter has been fabricated using the Al/ZnO film on diamond wafer.

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

242-245

DOI:

10.4028/www.scientific.net/KEM.336-338.242

Citation:

X.B. Wang et al., "Investigation of High-Quality ZnO Film on Polycrystalline Diamond Wafer for Fabrication of High Frequency SAW Filter", Key Engineering Materials, Vols. 336-338, pp. 242-245, 2007

Online since:

April 2007

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Price:

$35.00

[1] H. Nakahata, A. Hachigo, S. Shikata and N. Fujimori: IEEE Ultrason. Symp Vol. 1 (1992), p.377.

[2] M. Kadota and H. kando: IEEE Ultrason. Symp Vol. 1 (2002), p.167.

[3] H. Nakahata, S. Fujii, K. Higaki, A. Hachigo, H. Kitabayashi, S. Shikat and N. Fujimori: Semicond Sci Technol Vol. 18 (2003), p.96.

DOI: 10.1088/0268-1242/18/3/314

[4] S. Muthukumar, C.R. Gorla, N.W. Emanetoglu, S. Liang and Y. Lu: J. Cryst. Growth Vol. 225 (2001), p.197.

[5] B.S. Li, Y.C. Liu, D.Z. Shen, Y.M. Lu, J.Y. Zhang, X.G. Kong and X.W. Fan: J. Vac. Sci. Technol. A Vol. 20 (2002), p.265.

[6] M. Quintana, E. Ricra, J. Rodriguez and W. Estrada: Catalysis Today Vol. 76 (2003), p.141.

[7] H. Nakahata, H, Kitabayashi, S. Fujii, K. Higaki, K. Tanabe, Y. Seki and S. Shikata: IEEE Ultrason. Symp Vol. 1 (1996), p.285.

[8] J. Yu, R. Huang, L. Wen and C. Shi: Materials Letters Vol. 32 (1997), p.143.

[9] L. J. Meng, M. Andritschky and M.P. dos Santos: Vacuum Vol. 45 (1994), p.19.

[10] S.J. Chang, Y.K. Su and Y.P. Shei: J. Vac. Sci. Technol. A Vol. 13 (1995), p.385.

[11] R. Cebulla, R. Wendt and K. Ellmer: J. Appl. Phys Vol. 83 (1998), p.1087.

[12] Y. Yoshino, K. Inoue and M. Kohwada, Vacuum Vol. 51 (1998), p.601.

[13] J.A. Thornton: Annu. Rev. mater. Sci Vol. 7 (1977), p.239.

[14] F.S. Hickrnell: IEEE Ultrason. Symp Vol. 1 (1996), p.235.

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