Electronic Structure Study of Ni/Al2O3/Ni from First-Principles

Abstract:

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The electronic structure and magnetic properties of Ni/Al2O3/Ni tunnel junctions with O-terminated and Al-terminated interface models are investigated by first-principles discrete variational method with the local-spin-density approximation. The results show that the interface atomic has an important effect on interface electronic state and spin polarization as well as TMR ratio. For the O-terminated and Al-terminated interface models, spin polarization at Fermi level of Ni layers exhibit negative. It is found that absolute value of spin polarization as well as TMR ratio of Al-terminated interface models is much larger than that of O-terminated interface, which shows over-oxidization of Al layer could deteriorate magnetoresistance properties.

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

2540-2542

DOI:

10.4028/www.scientific.net/KEM.336-338.2540

Citation:

J. X. Shang and M. Q. Guo, "Electronic Structure Study of Ni/Al2O3/Ni from First-Principles", Key Engineering Materials, Vols. 336-338, pp. 2540-2542, 2007

Online since:

April 2007

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Price:

$35.00

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