Mechanical and Electrical Properties of Boron-Oxygen-Nitrogen Film as Buffer Layer

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BON film was fabricated as buffer layer by radio frequency plasma enhanced metal-organic chemical vapor deposition with 100 kHz frequency and trimethyl borate precursor. The typical binding energy of each element is 191.5 eV of B1s, 399.4 eV of N1s, and 531.2 eV of O1s in the films detected by XPS. HRTEM showed the film contained amorphous composition and nano-sized crystalline particles. Electrical properties of films were characterized by I–V curve. The order-magnitude of electric conductivity was measured as several tens (·cm)-1. The hardness of BON film was ~ 10 GPa.

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Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

2586-2588

DOI:

10.4028/www.scientific.net/KEM.336-338.2586

Citation:

G. C. Chen et al., "Mechanical and Electrical Properties of Boron-Oxygen-Nitrogen Film as Buffer Layer", Key Engineering Materials, Vols. 336-338, pp. 2586-2588, 2007

Online since:

April 2007

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$35.00

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