Mechanical and Electrical Properties of Boron-Oxygen-Nitrogen Film as Buffer Layer
BON film was fabricated as buffer layer by radio frequency plasma enhanced metal-organic chemical vapor deposition with 100 kHz frequency and trimethyl borate precursor. The typical binding energy of each element is 191.5 eV of B1s, 399.4 eV of N1s, and 531.2 eV of O1s in the films detected by XPS. HRTEM showed the film contained amorphous composition and nano-sized crystalline particles. Electrical properties of films were characterized by I–V curve. The order-magnitude of electric conductivity was measured as several tens (·cm)-1. The hardness of BON film was ~ 10 GPa.
Wei Pan and Jianghong Gong
G. C. Chen, B. Li, Y. M. Tong, F. X. Lu, J. H. Boo, "Mechanical and Electrical Properties of Boron-Oxygen-Nitrogen Film as Buffer Layer", Key Engineering Materials, Vols. 336-338, pp. 2586-2588, 2007