Effect of Ti Content on Microstructure and Dielectric Properties of Li and Ti Co-Doped NiO Thin Films


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Li and Ti co-doped NiO thin films with 200 nm in thickness were deposited onto Pt/Ti/SiO2/ Si(100) substrates using a sol-gel spin-coating method. The effect of Ti doping content on microstructure and dielectric properties of Li0.10TixNi0.90-xO (x=5-20mol%) thin films was investigated. XRD results showed that all the Li0.10TixNi0.90-xO thin films consisted of a mixture of NiO, Li2NiO2 and NiTiO3 oxides. The intensities of the diffraction peaks for the NiTiO3 phase increased and those for NiO decreased with increasing Ti content, suggesting that a part of NiO phase combined with Ti to form NiTiO3 phase. The dielectric constants of all the Li0.10TixNi0.90-xO thin films at 102 Hz at room temperature ranged from 200 to 400 and increased with increasing Ti content. The frequency stability of the dielectric constant for the Li0.10TixNi0.90-xO thin films was also improved greatly with increasing Ti content.



Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong




Y. R. Zhang et al., "Effect of Ti Content on Microstructure and Dielectric Properties of Li and Ti Co-Doped NiO Thin Films", Key Engineering Materials, Vols. 336-338, pp. 2639-2642, 2007

Online since:

April 2007




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