Effect of Ti Content on Microstructure and Dielectric Properties of Li and Ti Co-Doped NiO Thin Films
Li and Ti co-doped NiO thin films with 200 nm in thickness were deposited onto Pt/Ti/SiO2/ Si(100) substrates using a sol-gel spin-coating method. The effect of Ti doping content on microstructure and dielectric properties of Li0.10TixNi0.90-xO (x=5-20mol%) thin films was investigated. XRD results showed that all the Li0.10TixNi0.90-xO thin films consisted of a mixture of NiO, Li2NiO2 and NiTiO3 oxides. The intensities of the diffraction peaks for the NiTiO3 phase increased and those for NiO decreased with increasing Ti content, suggesting that a part of NiO phase combined with Ti to form NiTiO3 phase. The dielectric constants of all the Li0.10TixNi0.90-xO thin films at 102 Hz at room temperature ranged from 200 to 400 and increased with increasing Ti content. The frequency stability of the dielectric constant for the Li0.10TixNi0.90-xO thin films was also improved greatly with increasing Ti content.
Wei Pan and Jianghong Gong
Y. R. Zhang et al., "Effect of Ti Content on Microstructure and Dielectric Properties of Li and Ti Co-Doped NiO Thin Films", Key Engineering Materials, Vols. 336-338, pp. 2639-2642, 2007